TPCP8302_08 Datasheet, PDF (2/7 Pages) Toshiba Semiconductor – Silicon P Channel MOS Type (U-MOSⅣ)

Thermal Characteristics
TPCP8302
Characteristic
Symbol
Max Unit
Single-device operation
Thermal resistance,
(Note 3a)
channel to ambient
(t = 5 s)
(Note 2a) Single-device value at
dual operation (Note 3b)
R_{th (ch-a) (1)}
R_{th (ch-a) (2)}
Single-device operation
Thermal resistance,
(Note 3a)
channel to ambient
(t = 5 s)
(Note 2b) Single-device value at
dual operation (Note 3b)
R_{th (ch-a) (1)}
R_{th (ch-a) (2)}
84.5
101.6
215.5
347.2
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
25.4
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
(b)
Note 3: a) The power dissipation and thermal resistance values shown are for a single device.
(During single-device operation, power is applied to one device only.)
b) The power dissipation and thermal resistance values shown are for a single device.
(During dual operation, power is applied to both devices evenly.).
Note 4: V_DD = −16 V, T_ch = 25°C (initial), L = 0.2 mH, R_G = 25 Ω, I_AR = −5 A
Note 5: Repetitive rating: pulse width limited by maximum channel temperature
Note 6: ● on the lower left of the marking indicates Pin 1.
* Weekly code (three digits):
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the year)
2
2008-12-21