TPC8040-H Datasheet, PDF (2/7 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)

Thermal Characteristics
Characteristic
Symbol
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a)
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b)
R_{th (ch-a)}
R_{th (ch-a)}
Max
65.8
125
Unit
°C/W
°C/W
Marking (Note 5)
TPC8040
H
Part No. (or abbreviation code)
Lot No.
A line indicate lead (Pb)-free finish.
TPC8040-H
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
(b)
Note 3: V_DD = 24 V, T_ch = 25°C (initial), L = 500 μH, R_G = 25 Ω, I_AR = 13 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: • on lower left of the marking indicates Pin 1.
* Weekly code: (Three digits)
Week of manufacture
(01 for the first week of the year: sequential number up to 52 or 53)
Year of manufacture
(The last digit of the year)
2
2008-10-17