TPC8010-H Datasheet, PDF (2/7 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII)

Thermal Characteristics
Characteristics
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a)
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b)
Symbol
R_{th (ch-a)}
R_{th (ch-a)}
Max Unit
65.8 °C/W
125 °C/W
Marking (Note 5)
TPC8010-H
TPC8010
H
˞
TYPE
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
(a)
(b)
Note 3: V_DD = 24 V, T_ch = 25°C (initial), L = 1.0 mH, R_G = 25 Ω, I_AR = 11 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: • on lower left of the marking indicates Pin 1.
˞ shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of
manufacture: January to December are denoted by letters A to L respectively.)
2
2002-03-12