TLP3131_07 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – MEASUREMENT INSTRUMENTS

TLP3131
Absolute Maximum Ratings (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Forward Current
Forward Current Derating (Ta ^>= 25°C)
Reverse Voltage
Junction Temperature
Off-State Output Terminal Voltage
I_F
ΔI_F/°C
V_R
T_j
V_OFF
50
mA
−0.5
mA/°C
5
V
125
°C
20
V
On-State Current
On-State Current Derating (Ta ^>= 25°C)
I_ON
ΔI_ON/°C
300
mA
−3.0
mA/°C
Junction Temperature
T_j
Storage Temperature Range
T_stg
Operating Temperature Range
T_opr
Lead Soldering Temperature (10 s)
T_sol
Isolation Voltage (AC, 1 minute, R.H. ^<= 60%) (NOTE1)
BV_S
125
−40~125
−20~85
260
1500
°C
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(NOTE 1) : Device considered a two-terminal device : Pins 1 and, 2 shorted together, and pins 3 and 4 shorted
together.
Caution
This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and
equipment are earthed.
Recommended Operating Conditions
CHARACTERISTIC
SYMBOL MIN. TYP. MAX. UNIT
Supply Voltage
Forward Current
On-State Current
Operating Temperature
V_DD
I_F
I_ON
T_opr
⎯
⎯
20
V
10
⎯
30
mA
⎯
⎯ 300 mA
25
⎯
60
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Individual Electrical Characteristics (Ta = 25°C)
CHARACTERISTIC
Forward Voltage
Reverse Current
Capacitance
SYMBOL
V_F
I_R
C_T
TEST CONDITION
I_F = 10 mA
V_R = 5 V
V = 0, f = 1 MHz
Off-State Current
I_OFF
V_OFF = 20 V, Ta = 50°C
MIN.
1.0
⎯
⎯
⎯
TYP.
1.15
⎯
15
⎯
MAX.
1.3
10
⎯
UNIT
V
μA
pF
1000 pA
Capacitance
C_OFF
V = 0, f = 100 MHz, t < 1 s
⎯
5.0
12.0
pF
2
2007-10-01