TLP3125 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – Replacement for Mechanical-Relay Measurement Instrumentation

Absolute Maximum Ratings (Ta = 25°C)
TLP3125
Characteristic
Symbol
Rating
Unit
Forward current
Forward current derating (Ta ≥ 25°C)
Peak forward current (100 μs pulse, 100 pps)
Reverse voltage
Junction temperature
Off-state output terminal voltage
On-state current
On-state current derating (Ta ≥ 25°C)
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature (10 s)
Isolation voltage (AC, 1 minute, R.H. ≤ 60%) (Note 1)
I_F
ΔI_F/°C
I_FP
V_R
T_j
V_OFF
I_ON
ΔI_ON/°C
T_j
T_stg
T_opr
T_sol
BV_S
50
−0.5
1
5
125
400
200
−2
125
−55 to 125
−40 to 85
260
1500
mA
mA/°C
A
V
°C
V
mA
mA/°C
°C
°C
°C
°C
Vrms
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device considered a two-terminal device : LED side pins shorted together, and detector side pins
shorted together.
Recommended Operating Conditions
Characteristic
Symbol
Min. Typ. Max. Unit
Supply voltage
V_DD
⎯
⎯
320
V
Forward current
I_F
5
7.5
25
mA
Operating temperature
T_opr
−20
⎯
65
°C
Recommended operating conditions are given as a design guideline to obtain expected
performance of the device. Additionally, each item is an independent guideline
respectively. In developing designs using this product, please confirm specified
characteristics shown in this document.
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Capacitance
Off-state current
Symbol
V_F
I_R
C_T
I_OFF
Test Condition
I_F = 10 mA
V_R = 5 V
V = 0, f = 1 MHz
V_OFF = 400 V, Ta = 60°C
Min.
Typ.
Max. Unit
1.0
1.15
1.3
V
⎯
⎯
2
μA
⎯
30
⎯
pF
⎯
60
100
nA
Capacitance
C_OFF
V = 0, f = 1 MHz
⎯
410
500
pF
2
2008-04-14