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TLP3116 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – MEASUREMENT INSTRUMENTS LOGIC IC TESTERS/MEMORY TESTERS BOARD TESTERS/SCANNERS
TLP3116
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Forward Current
Forward Current Derating (Ta >= 25°C)
Reverse Voltage
Junction Temperature
Off-State Output Terminal Voltage
On-State Current
On-State Current Derating (Ta >= 25°C)
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Lead Soldering Temperature (10 s)
Isolation Voltage (AC, 1 minute, R.H. <= 60%) (NOTE1)
IF
DIF/°C
VR
Tj
VOFF
ION
DION/°C
Tj
Tstg
Topr
Tsol
BVS
50
-0.5
5
125
40
120
-1.2
125
-40~125
-20~85
260
1500
mA
mA/°C
V
°C
V
mA
mA/°C
°C
°C
°C
°C
Vrms
(NOTE1) : Device considered a two-terminal device : Pins 1 and, 2 shorted together, and
pins 3 and 4 shorted together.
CAUTION
This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and
equipment are earthed.
RECOMMENDED OPERATING CONDITIONS
CHARACTERISTIC
Supply Voltage
Forward Current
On-State Current
Operating Temperature
SYMBOL
VDD
IF
ION
Topr
MIN. TYP. MAX. UNIT
¾
¾
32
V
10
¾
30
mA
¾
¾
120 mA
25
¾
60
°C
INDIVIDUAL ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Forward Voltage
Reverse Current
Capacitance
Off-State Current
SYMBOL
TEST CONDITION
VF
IF = 10 mA
IR
VR = 5 V
CT
V = 0, f = 1 MHz
IOFF
VOFF = 30 V, Ta = 50°C
Capacitance
COFF
V = 0, f = 100 MHz, t < 1 s
MIN.
1.0
¾
¾
¾
TYP.
1.15
¾
15
¾
MAX.
1.3
10
¾
UNIT
V
mA
pF
1000
pA
¾
1.0
2.0
pF
2
2003-7-7