TLP2301 Datasheet, PDF (2/11 Pages) Toshiba Semiconductor – Collector-emitter voltage - 40 V (min)

5. Principle of Operation
5.1. Mechanical Parameters
TLP2301
Characteristics
Creepage distances
Clearance
Internal isolation thickness
Min
Unit
5.0
mm
5.0
0.4
6. Absolute Maximum Ratings (Note) (Unless otherwise specified, T_a = 25 )
Characteristics
Symbol
Note
Rating
Unit
LED Input forward current
I_F
50
mA
Input forward current derating
(T_a ≥ 90 )
∆I_F/∆T_a
-1.11
mA/
Input forward current (pulsed)
I_FP
(Note 1)
1
A
Input reverse voltage
V_R
5
V
Input power dissipation
P_D
100
mW
Junction temperature
T_j
135

Detector Collector-emitter voltage
V_CEO
40
V
Emitter-collector voltage
V_ECO
7
V
Collector current
I_C
50
mA
Collector power dissipation
P_C
150
mW
Collector power dissipation
derating (1 circuit)
(T_a ≥ 25 )
∆P_C/∆T_a
-1.35
mW/
Junction temperature
T_j
135

Common Operating temperature
T_opr
-55 to 125
Storage temperature
T_stg
-55 to 125
Lead soldering temperature
(10 s)
T_sol
260

Total power dissipation
P_T
200
mW
Input power dissipation
derating
(T_a ≥ 25 )
∆P_D/∆T_a
-1.82
mW/
Isolation voltage
AC, 60 s, R.H. ≤ 60%
BV_S
(Note 2)
3750
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width (PW) ≤ 0.1 ms, f = 100 Hz
Note 2: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are
shorted together.
©2016 Toshiba Corporation
2
2016-01-13
Rev.3.0