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TLP191B Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – TOSHIBA Photocoupler GaAℓAs Ired & Photo-Diode Array
Recommended Operating Conditions
Characteristic
Forward current
Operating temperature
Symbol
IF
Topr
Min. Typ. Max. Unit
―
20
-25
―
25
mA
85
°C
TLP191B
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
LED
Detector
Forward voltage
Reverse current
Capacitance
Forward voltage
Reverse current
Capacitance
(anode to cathode)
Symbol
VF
IR
CT
VFD
IRD
CTD
Test Condition
IF = 10 mA
VR = 3 V
V = 0, f = 1 MHz
IFD = 10 µA
VRD = 10 V
V = 0, f = 1 MHz
Min. Typ. Max. Unit
1.2
1.4
1.7
V
—
—
10
µA
—
30
60
pF
—
7
—
V
—
7
—
µA
—
—
—
pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Open voltage
Short current
Symbol
VOC
ISC
Test Condition
IF = 20 mA
IF = 20 mA
Isolation Characteristics (Ta = 25°C)
Characteristic
Capacitance input to output
Isolation resistance
Isolation voltage
Symbol
CS
RS
BVS
Test Condition
VS = 0, f = 1 MHz
VS = 500 V, R.H. ≤ 60%
AC, 1 minute
AC, 1 second in oil
DC, 1 minute in oil
MIn. Typ. Max. Unit
7
8
—
V
24
40
—
µA
Min. Typ. Max. Unit
—
0.8
—
pF
5×1010 1014
—
Ω
2500 —
—
Vrms
— 5000 —
— 5000
—
Vdc
Switching Characteristics (Ta = 25°C)
Characteristic
Turn-on time
Turn-off time
Fig. 1 Switching time test circuit
IF
Symbol
Test Condition
Min. Typ. Max. Unit
tON
IF = 20mA, CL = 1000 pF
—
0.2
—
ms
tOFF
(Fig.1) —
3
—
ms
VOUT
CL
IF
VOUT
5V
0V
tON
1V
tOFF
2
2002-09-25