|
TLP191B Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – TOSHIBA Photocoupler GaAℓAs Ired & Photo-Diode Array | |||
|
◁ |
Recommended Operating Conditions
Characteristic
Forward current
Operating temperature
Symbol
IF
Topr
Min. Typ. Max. Unit
â
20
-25
â
25
mA
85
°C
TLP191B
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
LED
Detector
Forward voltage
Reverse current
Capacitance
Forward voltage
Reverse current
Capacitance
(anode to cathode)
Symbol
VF
IR
CT
VFD
IRD
CTD
Test Condition
IF = 10 mA
VR = 3 V
V = 0, f = 1 MHz
IFD = 10 µA
VRD = 10 V
V = 0, f = 1 MHz
Min. Typ. Max. Unit
1.2
1.4
1.7
V
â
â
10
µA
â
30
60
pF
â
7
â
V
â
7
â
µA
â
â
â
pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Open voltage
Short current
Symbol
VOC
ISC
Test Condition
IF = 20 mA
IF = 20 mA
Isolation Characteristics (Ta = 25°C)
Characteristic
Capacitance input to output
Isolation resistance
Isolation voltage
Symbol
CS
RS
BVS
Test Condition
VS = 0, f = 1 MHz
VS = 500 V, R.H. ⤠60%
AC, 1 minute
AC, 1 second in oil
DC, 1 minute in oil
MIn. Typ. Max. Unit
7
8
â
V
24
40
â
µA
Min. Typ. Max. Unit
â
0.8
â
pF
5Ã1010 1014
â
â¦
2500 â
â
Vrms
â 5000 â
â 5000
â
Vdc
Switching Characteristics (Ta = 25°C)
Characteristic
Turn-on time
Turn-off time
Fig. 1 Switching time test circuit
IF
Symbol
Test Condition
Min. Typ. Max. Unit
tON
IF = 20mA, CL = 1000 pF
â
0.2
â
ms
tOFF
(Fig.1) â
3
â
ms
VOUT
CL
IF
VOUT
5V
0V
tON
1V
tOFF
2
2002-09-25
|
▷ |