TLP188 Datasheet, PDF (2/10 Pages) Toshiba Semiconductor – Photocouplers GaA As Infrared LED & Photo Transistor

TLP188
6. Absolute Maximum Ratings (Note) (Unless otherwise specified, T_a = 25)
Characteristics
Symbol Note
Rating
Unit
LED Input forward current
Input forward current derating
(T_a ≥ 90)
I_F
∆I_F/∆T_a
50
-1.43
mA
mA/
Input forward current (pulsed)
I_FP
(Note 1)
1
A
Input reverse voltage
Junction temperature
V_R
5
V
T_j
125

Detector Collector-emitter voltage
V_CEO
350
V
Emitter-collector voltage
Collector current
V_ECO
I_C
7
50
mA
Collector power dissipation
P_C
150
mW
Collector power dissipation
derating
(T_a ≥ 25)
∆P_C/∆T_a
-1.5
mW/
Junction temperature
Common Operating temperature
T_j
125

T_opr
-55 to 110
Storage temperature
T_stg
-55 to 125
Lead soldering temperature
(10 s)
T_sol
Total power dissipation
P_T
260
200
mW
Input power dissipation
derating
(T_a ≥ 25)
∆P_D/∆T_a
-2
mW/
Isolation voltage
AC, 1min, R.H. ≤ 60%
BV_S
(Note 2)
3750
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width (PW) ≤ 100 µs, f = 100 Hz
Note 2: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are
shorted together.
7. Electrical Characteristics (Unless otherwise specified, T_a = 25)
Characteristics
LED Input forward voltage
Input reverse current
Input capacitance
Detector Collector-emitter breakdown
voltage
Emitter-collector breakdown
voltage
Dark Current
Collector-emitter capacitance
Symbol
V_F
I_R
C_t
V_(BR)CEO
Note
Test Condition
I_F = 10 mA
V_R = 5 V
V = 0 V, f = 1 MHz
I_C = 0.1 mA
Min Typ. Max Unit
1.1 1.25 1.4
V


10
µA

30

pF
350


V
V_(BR)ECO
I_E = 0.1 mA
7


I_DARK
C_CE
V_CE = 300 V

0.01 0.2
µA
V_CE = 300 V, T_a = 85


50
V = 0 V, f = 1 MHz

10

pF
2
2013-02-27
Rev.1.0