TLOU114P Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – TOSHIBA InGaAℓP LED

TLOU114P,TLSU114P,TLYU114P
Electrical And Optical characteristics (Ta = 25°C)
Prodact
Typ.Emission
Wevelength
λ_p
∆λ
I_F
Luminous
Intensity
I_V
Min
Typ.
I_F
TLOU114P
TLSU114P
TLYU114P
Unit
612
15
636
17
590
13
nm
20
47.6
250
20
20
47.6
250
20
20
47.6
130
20
mA
mcd
mA
Forward
Voltage
V_F
Typ.
Max
I_F
2.0
2.4
20
2.0
2.4
20
2.1
2.5
20
V
mA
Reverse
Current
I_R
Max
V_R
50
4
50
4
50
4
µA
V
Precaution
Please be careful of the followings
· Soldering temperature: 260°C max Soldering time: 3s max
(Soldering portion of lead: up to 2mm from the body of the device)
· If the lead is formed, the lead should be formed up to 5mm from the body of the device without forming stress to
the resin. Soldering should be performed after lead forming.
· This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp,please ensure
that it will not be affected by this IR light.
2
2002-09-25