TLOH190P_06 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – Panel Circuit Indicator

TLOH190P(F)
Electrical And Optical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min Typ. Max Unit
Forward voltage
V_F
I_F = 20mA
―
2.1 2.5
V
Reverse current
I_R
V_R = 4V
―
―
50
µA
Luminous
intensity
TLOH190P(F)
TLOH190P(XY,F)
I_V
I_F = 20mA
8500 33000 ―
(Note)
mcd
15300 ― 73600
Peak emission wavelength
λ_P
I_F = 20mA
― (612) ―
nm
Spectral line half width
∆λ
I_F = 20mA
―
15
―
nm
Dominant wavelength
λ_d
I_F = 20mA
―
605
―
nm
(Note):Lamps are classified into the following ranks according to their luminous intensityɼand packed in boxes

by each rankɽ



W: 8500ʵ2300mcd, X: 15300ʵ41400mcd, Y: 27200mcdʵ
Precaution
Please be careful of the followings
• Soldering temperature: 260°Cmax soldering time: 3s max
(Soldering portion of lead: up to 1.6mm from the body of the device)
• If the lead is formed, the lead should be formed up to 1.6mm from the body of the device without forming stress
to the resin. Soldering should be performed after lead forming.
• This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure
that it will not be affected by this IR light.
2
2006-01-20