TLN231 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – Infrared LED for Space-Optical-Transmission

TLN231
Optical and Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Forward voltage
Reverse current
Radiant intensity
Radiant power
Cut-off frequency
Peak emission wavelength
Half-angle value
V_F
I_F = 100 mA
¾
1.6
2.0
V
I_R
V_R = 4 V
¾
¾
60
mA
I_E
I_F = 50 mA
35
60
¾ mW/sr
P_O
I_F = 50 mA
¾
30
¾ mW
f_c
I_F = 50 mA + 5 mA_P-P
(Note 3) ¾
15
¾ MHz
l_P
I_F = 50 mA
q¹
2
I_F = 50 mA
¾
870
¾
nm
¾
±16
¾
°
Note 3: Frequency when modulation light power decreases by 3dB from 1 MHz.
Handling Precautions
· Soldering must be performed under the stopper.
· When forming the leads, bend each lead under the 5 mm of package body. Soldering must be performed after the
leads have been formed.
· The radiant intensity decrease over time due to current flowing in the infrared LED. When designing circuits,
the device must take into account the change in radiant intensity over time. The change in radiant intensity is
equal to the reciprocal of the change in LED infrared optical output.
IE _(t)
IE ₍₀₎
=
Po _(t)
Po ₍₀₎
2
2001-10-03