TLGE174P Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – TOSHIBA LED Lamp InGaAP Green Light Emission

TLGE174P
Electrical And Optical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min Typ. Max Unit
Forward voltage
Reverse current
Luminous intensity
Peak emission wavelength
Spectral line half width
Dominant wavelength
V_F
I_F = 20mA
I_R
V_R = 4V
I_V
I_F = 20mA
λ_p
I_F = 20mA
∆λ
I_F = 20mA
λ_d
I_F = 20mA
―
2.27
2.8
V
―
―
50
µA
(Note) 476 1400
―
mcd
―
574
―
nm
―
11
―
nm
―
571
―
nm
(Note): Lamps are classified into the following ranks according to their luminous intensity.
Measurement tolerance for each limit is ±15%.
R: 560-1120mcd, S: 1000-2000mcd, T: 1800-3600mcd
Precaution
Please be careful of the followings
· Soldering temperature: 260°C max
Soldering time: 3 s max
(Soldering portion of lead: Up to 2mm from the body of the device)
· If the lead is formed, the lead should be formed up to 5mm from the body of the device without forming stress to
the resin. Soldering should be performed after lead forming.
· This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure
that it will not be affected by this IR light.
2
2002-09-25