TK10E60W Datasheet, PDF (2/10 Pages) Toshiba Semiconductor – MOSFETs Silicon N-Channel MOS (DTMOS)

TK10E60W
4. Absolute Maximum Ratings (Note) (T_a = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
Storage temperature
Mounting torque
(T_c = 25)
(Note 1)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
V_DSS
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
I_DR
I_DRP
T_ch
T_stg
TOR
600
±30
9.7
38.8
100
121
2.5
9.7
38.8
150
-55 to 150
0.6
V
A
W
mJ
A

Nm
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: V_DD = 90 V, T_ch = 25 (initial), L = 33.9 mH, R_G = 25 Ω, I_AR = 2.5 A
Symbol
R_th(ch-c)
R_th(ch-a)
Max
Unit
1.25
/W
83.3
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2
2012-08-27
Rev.2.0