TIM8596-15 Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

TIM8596-15
ABSOLUTE MAXIMUM RATINGS ( Ta= 25° C )
CHARACTERISTICS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (Tc= 25 °C)
Channel Temperature
Storage
SYMBOL
VDS
VGS
IDS
PT
Tch
Tstg
UNIT
V
V
A
W
°C
°C
PACKAGE OUTLINE (2-11C1B)
RATING
15
-5
11.5
60
175
-65 ∼ +175
4-R3.0
•
‚
Unit in mm
• Gate
‚
‚ Source
ƒ Drain
ƒ
0.6± 0.15
17.0± 0.3
21.5 MAX..
11.0 MAX.
HANDLING PRECAUTIONS FOR PACKAGED TYPE
Soldering iron should be grounded and the operating time should not exceed 10 seconds at
260° C.
2