TIM1414-30L Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

TIM1414-30L
ABSOLUTE MAXIMUM RATINGS ( Ta= 25_°C )
CHARACTERISTICS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (Tc= 25 °C)
Channel Temperature
Storage
SYMBOL
VDS
VGS
IDS
PT
Tch
Tstg
UNIT
V
V
A
W
°^C
°C
PACKAGE OUTLINE (7-AA03A)
RATING
15
-5
20
136
175
-65 to +175
(1)
(2)
(2)
Unit in mm
(1) Gate
(2) Source
(3) Drain
(3)
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
2