TIM1314-30L Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

TIM1314-30L
ABSOLUTE MAXIMUM RATINGS ( Ta= 25_°C )
CHARACTERISTICS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (Tc= 25 °C)
Channel Temperature
Storage
SYMBOL
VDS
VGS
IDS
PT
Tch
Tstg
UNIT
V
V
A
W
°^C
°C
PACKAGE OUTLINE (7-AA03A)
RATING
15
-5
20
136
175
-65 to +175
4 - R0.5
0.5±0.1
(1)
(2)
(2)
Unit in mm
(1) Gate
(2) Source
(3) Drain
(3)
21.9±0.3
25.5 MAX.
16.4 MAX.
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
2