TIM1213-4L Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band)

TIM1213-4L
Absolute Maximum Ratings (Ta = 25° C)
Characteristic
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Drain Current
I_DS
Total Power Dissipation (T_c = 25°C)
P_T
Channel Temperature
T_ch
Storage Temperature
T_stg
Package Outline (2-9D1A)
Unit
Rating
V
15
V
-5
A
5.2
W
30
˚C
175
˚C
-65~175
Handling Precautions for Packaged Type
Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C.
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MW50230196
TOSHIBA CORPORATION