TGI8596-50 Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – MICROWAVE POWER GaN HEMT

TGI8596-50
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
CHARACTERISTICS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (Tc= 25 _°C)
Channel Temperature
Storage
SYMBOL
VDS
VGS
IDS
PT
Tch
Tstg
UNIT
V
V
A
W
°^C
°^C
RATING
50
-10
15
140
250
-65 to +175
PACKAGE OUTLINE ( 7- AA04A )
Unit in mm
c Gate
d Source
e Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C.
2