TD62783APG_06 Datasheet, PDF (2/11 Pages) Toshiba Semiconductor – 8CH HIGH−VOLTAGE SOURCE DRIVER

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
TD62783,784APG/AFWG
CHARACTERISTIC
SYMBOL
RATING
UNIT
Supply Voltage
Output Current
Input Voltage
Clamp Diode Reverse Voltage
Clamp Diode Forward Current
Power Dissipation
APG
AFWG
Operating Temperature
Storage Temperature
V_CC
I_OUT
V_IN (Note 1)
V_IN (Note 2)
V_R
I_F
P_D
T_opr
T_stg
50
V
−500
mA / ch
15
V
30
50
V
500
mA
1.47
W
0.92 / 1.31 (Note 3)
−40~85
°C
−55~150
°C
Note 1: Only TD62783APG / AFWG
Note 2: Only TD62784APG / AFWG
Note 3: On Glass Epoxy PCB (75 × 114 × 1.6 mm Cu 20%)
RECOMMENDED OPERATING CONDITIONS (Ta = −40~85°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN TYP. MAX UNIT
Supply Voltage
Output Current
TD62783,784APG
TD62783,784AFWG
Input Voltage
TD62783APG / AFWG
TD62784APG / AFWG
Input
Voltage
Output
On
Output
Off
TD62783APG / AFWG
TD62784APG / AFWG
TD62783APG / AFWG
TD62784APG / AFWG
Clamp Diode Reverse Voltage
Clamp Diode Forward Current
Power Dissipation
APG
AFWG
V_CC
I_OUT
V_IN
V_{IN (ON)}
V_{IN (OFF)}
V_R
I_F
P_D
⎯
⎯
Duty = 10% 8Circuits ⎯
Ta = 85°C _{Duty = 50% 8Circuits ⎯}
T_j = 120°C
T_pw = 25ms Duty = 10% 8Circuits ⎯
Duty = 50% 8Circuits ⎯
⎯
⎯
⎯
⎯
⎯
2.0
⎯
4.5
⎯
0
⎯
0
⎯
⎯
⎯
⎯
Ta = 85°C
⎯
Ta = 85°C
(Note) ⎯
⎯
50
V
⎯ −260
⎯
−59 _{mA /}
⎯ −180 ^ch
⎯ −38
⎯
12
V
⎯
24
5.0
15
12.0 30
V
⎯
0.8
⎯
2.0
⎯
50
V
⎯ 400 mA
⎯ 0.76
W
⎯ 0.68
Note: On Glass Epoxy PCB (75 × 114 × 1.6 mm Cu 20%)
2
2006-09-21