SSM3K05FU Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHALLEL MOS TYPE

SSM3K05FU
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Note 2: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
I_GSS
V_GS = ±12 V, V_DS = 0
¾
¾
±1
mA
V _{(BR) DSS} I_D = 1 mA, V_GS = 0
20
¾
¾
V
I_DSS
V_DS = 20 V, V_GS = 0
¾
¾
1
mA
V_th
V_DS = 3 V, I_D = 0.1 mA
0.6
¾
1.1
V
ïY_fsï
V_DS = 3 V, I_D = 200 mA
(Note 2) 350
¾
¾
mS
R_{DS (ON)} ^{ID = 200 mA, VGS = 4 V}
(Note 2) ¾
0.6 0.8
W
I_D = 200 mA, V_GS = 2.5 V
(Note 2) ¾
0.85 1.2
C_iss
V_DS = 3 V, V_GS = 0, f = 1 MHz
¾
22
¾
pF
C_rss
V_DS = 3 V, V_GS = 0, f = 1 MHz
¾
9
¾
pF
C_oss
V_DS = 3 V, V_GS = 0, f = 1 MHz
¾
21
¾
pF
t_on
V_DD = 3 V, I_D = 100 mA,
t_off
V_GS = 0~2.5 V
¾
60
¾
ns
¾
70
¾
Switching Time Test Circuit
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 mA for this
product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower
voltage than Vth.
(Relationship can be established as follows: VGS (off) < Vth < VGS (on))
Please take this into consideration for using the device.
VGS recommended voltage of 2.5 V or higher to turn on this product.
2
2003-03-28