SSM3K04FE Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

SSM3K04FE
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Gate-source resistor
Symbol
Test Condition
Min Typ. Max Unit
I_GSS
V_GS = 10 V, V_DS = 0
¾
¾
15
mA
V _{(BR) DSS} I_D = 100 mA, V_GS = 0
20
¾
¾
V
I_DSS
V_DS = 20 V, V_GS = 0
¾
¾
1
mA
V_th
V_DS = 3 V, I_D = 0.1 mA
0.7
¾
1.3
V
ïY_fsï
V_DS = 3 V, I_D = 10 mA
25
50
¾
mS
R_{DS (ON)} I_D = 10 mA, V_GS = 2.5 V
¾
4
12
W
C_iss
V_DS = 3 V, V_GS = 0, f = 1 MHz
¾ 11.0 ¾
pF
C_rss
V_DS = 3 V, V_GS = 0, f = 1 MHz
¾
3.3
¾
pF
C_oss
V_DS = 3 V, V_GS = 0, f = 1 MHz
¾
9.3
¾
pF
t_on
V_DD = 3 V, I_D = 10 mA, V_GS = 0~2.5 V
¾
0.16
¾
ms
t_off
V_DD = 3 V, I_D = 10 mA, V_GS = 0~2.5 V
¾
0.19
¾
R_GS
V_GS = 0~10 V
0.7
1.0
1.3
MW
Switching Time Test Circuit
(a) Test circuit
(b) VIN
VGS
(c) VOUT
VDS
2
2003-03-27