SSM3K03FV Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

SSM3K03FV
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source on-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Symbol
Test Condition
Min Typ. Max Unit
I_GSS
V_GS = 10 V, V_DS = 0
⎯
⎯
1
μA
V _{(BR) DSS} I_D = 100 μA, V_GS = 0
20
⎯
⎯
V
I_DSS
V_DS = 20 V, V_GS = 0
⎯
⎯
1
μA
V_th
V_DS = 3 V, I_D = 0.1 mA
0.7
⎯
1.3
V
⎪Y_fs⎪
V_DS = 3 V, I_D = 10 mA
25
50
⎯
mS
R_{DS (ON)} I_D = 10 mA, V_GS = 2.5 V
⎯
4
12
Ω
C_iss
V_DS = 3 V, V_GS = 0, f = 1 MHz
⎯ 11.0 ⎯
pF
C_rss
V_DS = 3 V, V_GS = 0, f = 1 MHz
⎯
3.3
⎯
pF
C_oss
V_DS = 3 V, V_GS = 0, f = 1 MHz
⎯
9.3
⎯
pF
t_on
V_DD = 3 V, I_D = 10 mA, V_GS = 0~2.5 V
⎯
0.16
⎯
μs
t_off
V_DD = 3 V, I_D = 10 mA, V_GS = 0~2.5 V
⎯
0.19
⎯
Switching Time Test Circuit
(a) Test circuit
(b) V_IN
V_GS
(c) V_OUT
V_DS
Precaution
V_th can be expressed as the voltage between gate and source when the low operating current value is I_{D =} 100 μA for
this product. For normal switching operation, V_{GS (on)} requires a higher voltage than V_th and V_{GS (off)} requires a lower
voltage than V_th.
(The relationship can be established as follows: V_{GS (off)} < V_th < V_{GS (on)})
Take this into consideration when using the device.)
2
2007-11-01