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SSM3J15F Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications | |||
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Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Symbol
Test Condition
IGSS
V (BR) DSS
IDSS
Vth
âªYfsâª
RDS (ON)
Ciss
Crss
Coss
ton
toff
VGS = ±16 V, VDS = 0
ID = â0.1 mA, VGS = 0
VDS = â30 V, VGS = 0
VDS = â3 V, ID = â0.1 mA
VDS = â3 V, ID = â10 mA
ID = â10 mA, VGS = â4 V
ID = â1 mA, VGS = â2.5 V
VDS = â3 V, VGS = 0, f = 1 MHz
VDD = â5 V, ID = â10 mA,
VGS = 0~â5 V
SSM3J15F
MIN.
â¯
â30
â¯
â1.1
20
â¯
â¯
â¯
â¯
â¯
â¯
â¯
TYP.
â¯
â¯
â¯
â¯
â¯
8
14
9.1
3.5
8.6
65
175
MAX.
±1
â¯
â1
â1.7
â¯
12
32
â¯
â¯
â¯
â¯
â¯
UNIT
μA
V
μA
V
mS
Ω
pF
pF
pF
ns
Switching Time Test Circuit
(a) Test circuit
OUT
0
IN
â5V
10 μs
VDD = â5 V
Duty <= 1%
VIN: tr, tf < 5 ns
(Zout = 50 Ω)
Common Source
Ta = 25°C
RL
VDD
(b) VIN
0V
(c) VOUT
â5 V
VDS (ON)
VDD
10%
90%
90%
10%
tr
tf
ton
toff
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = â100 μA for this
product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage
than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on))
Please take this into consideration for using the device.
2
2007-11-01
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