SM3G48 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – AC POWER CONTROL APPLICATIONS

MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
Repetitive Peak
Off-State Voltage
(U)SM3G48
V_DRM
(U)SM3J48
R.M.S On-State Current
I_{T (RMS)}
Peak One Cycle Surge On-State
Current (Non-Repetitive)
I²t Limit Value
I_TSM
I²t
Critical Rate of Rise of On-State
Current
(Note 1)
di / dt
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
P_GM
P_{G (AV)}
V_GM
I_GM
T_j
T_stg
SM3G48,USM3G48,SM3J48,USM3J48
RATING
400
600
3
30 (50Hz)
33 (60Hz)
4.5
50
5
0.5
10
2
−40~125
−40~125
UNIT
V
A
A
A²s
A / ms
W
W
V
A
°C
°C
Note 1 : V_DRM=0.5×Rated
I_TM≤4.5A
t_gw≥10ms
t_gr≤250ns
i_gp=I_GT×2.0
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
Repetitive Peak Off-State Current
I
II
Gate Trigger Voltage
III
IV
I
II
Gate Trigger Current
III
IV
Peak On-State Voltage
Gate Non-Trigger Voltage
Holding Current
Thermal Resistance
Critical Rate of Rise of Off-State
Voltage
Critical Rate of Rise of Off-State
Voltage at Commutation
SYMBOL
TEST CONDITION
I_DRM
V_GT
I_GT
V_TM
V_GD
I_H
R_{th (j-c)}
dv / dt
V_DRM=Rated
T2 (+), Gate (+)
V_D=12V
R_L=20W
T2 (+), Gate (-)
T2 (-), Gate (-)
T2 (-), Gate (+)
T2 (+), Gate (+)
V_D=12V
R_L=20W
T2 (+), Gate (-)
T2 (-), Gate (-)
T2 (-), Gate (+)
I_TM=4.5A
V_D=Rated, Tc=125°C
V_D=12V, I_TM=1A
Junction to Case, AC
V_DRM=Rated, T_j=125°C
Exponential Rise
(dv / dt) c
V_DRM=400V, T_j=125°C
(di /dt) c=-2.0A / ms
MIN. TYP. MAX. UNIT
―
―
20
mA
―
―
1.5
―
―
1.5
V
―
―
1.5
―
―
―
―
―
20
―
―
20
mA
―
―
20
―
―
―
―
―
1.5
V
0.2
―
―
V
―
―
30 mA
―
―
3.6 °C / W
―
300
― V / ms
10
―
― V / ms
2
2001-07-13