SM16GZ47 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – AC POWER CONTROL APPLICATIONS

SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Off−State Current
I
II
Gate Trigger Voltage
III
IV
I
SM16GZ47
II
SM16JZ47
III
Gate Trigger
IV
Current
I
SM16GZ47A
II
SM16JZ47A
III
IV
Peak On−State Voltage
Gate Non−Trigger Voltage
Holding Current
Thermal Resistance
Critical Rate of Rise of
Off−State Voltage
SM16GZ47
SM16JZ47
SM16GZ47A
SM16JZ47A
Critical Rate of Rise of
Off−State Voltage at
Commutation
SM16GZ47
SM16JZ47
SM16GZ47A
SM16JZ47A
SYMBOL
TEST CONDITION
I_DRM
V_GT
I_GT
V_TM
V_GD
I_H
R_{th (j−c)}
V_DRM = Rated
T2 (+) , Gate (+)
V_D = 12V,
R_L = 20Ω
T2 (+) , Gate (−)
T2 (−) , Gate (−)
T2 (−) , Gate (+)
T2 (+) , Gate (+)
T2 (+) , Gate (−)
T2 (−) , Gate (−)
V_D = 12V,
R_L = 20Ω
T2 (−) , Gate (+)
T2 (+) , Gate (+)
T2 (+) , Gate (−)
T2 (−) , Gate (−)
T2 (−) , Gate (+)
I_TM = 25A
V_D = Rated, Tc = 125°C
V_D = 12V, I_TM = 1A
Junction to Case, AC
dv / dt
V_DRM = Rated, T_j = 125°C
Exponential Rise
MIN TYP. MAX UNIT
―
―
20
µA
―
―
1.5
―
―
1.5
V
―
―
1.5
―
―
―
―
―
30
―
―
30
―
―
30
―
―
―
mA
―
―
20
―
―
20
―
―
20
―
―
―
―
―
1.5
V
0.2
―
―
V
―
―
50
mA
―
―
2.5 °C / W
―
300
―
V / µs
―
200
―
(dv / dt) c
V_DRM = 400V, T_j = 125°C
(di / dt) c = − 8.7A / ms
10
―
―
V / µs
4
―
―
MARKING
* NUMBER
SYMBOL
*1
Toshiba Product Mark
SM16GZ47, SM16GZ47A
*2
TYPE
SM16JZ47, SM16JZ47A
*3
SM16GZ47A, SM16JZ47A
MARK
M16GZ47
M16JZ47
A
Example
*4
8A : January 1998
8B : February 1998
8L : December 1998
2
2001-07-13