SM16G48 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – AC POWER CONTROL APPLICATIONS

SM16(G,J)48,USM16(G,J)48,SM16(G,J)48A,USM16(G,J)48A
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Repetitive Peak
Off-State Voltage
(U)SM12G48
(U)SM12G48A
(U)SM12J48
(U)SM12J48A
R.M.S On-State Current
Peak One Cycle Surge On-State
Current (Non-Repetitive)
I²t Limit Value
Critical Rate of Rise of On-State
Current
(Note 1)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
SYMBOL
V_DRM
I_{T (RMS)}
I_TSM
I²t
di /dt
P_GM
P_{G (AV)}
V_GM
I_GM
T_j
T_stg
RATING
400
600
16
150 (50Hz)
165 (60Hz)
112.5
50
5
0.5
10
2
−40~125
−40~125
UNIT
V
A
A
A²s
A / ms
W
W
V
A
°C
°C
Note 1 :
V_DRM=0.5×Rated
I_TM≤25A
t_gw≥10ms
t_gr≤250ns
i_gp=I_GT×2.0
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
Repetitive Peak Off-State Current
I
II
Gate Trigger Voltage
III
IV
I
(U)SM16G48
II
(U)SM16J48
III
Gate Trigger
IV
Current
I
(U)SM16G48A
II
(U)SM16J48A
III
IV
Peak On-State Voltage
Gate Non-Trigger Voltage
Holding Current
Thermal Resistance
Critical Rate of Rise of
Off-State Voltage
(U)SM16G48
(U)SM16J48
(U)SM16G48A
(U)SM16J48A
Critical Rate of Rise of
Off-State Voltage at
Commutation
(U)SM16G48
(U)SM16J48
(U)SM16G48A
(U)SM16J48A
SYMBOL
I_DRM
V_GT
I_GT
V_TM
V_GD
I_H
R_{th (j-c)}
dv / dt
TEST CONDITION
V_DRM=Rated
T2 (+) , Gate (+)
V_D=12V
R_L=20W
T2 (+) , Gate (-)
T2 (-) , Gate (-)
T2 (-) , Gate (+)
T2 (+) , Gate (+)
T2 (+) , Gate (-)
T2 (-) , Gate (-)
V_D=12V
R_L=20W
T2 (-) , Gate (+)
T2 (+) , Gate (+)
T2 (+) , Gate (-)
T2 (-) , Gate (-)
T2 (-) , Gate (+)
I_TM=17A
V_D=Rated, Tc=125°C
V_D=12V, I_TM=1A
Junction to Case, AC
V_DRM=Rated, T_j=125°C
Exponential Rise
MIN.
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0.2
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TYP. MAX. UNIT
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20
mA
―
1.5
―
1.5
V
―
1.5
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30
―
30
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30
50
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mA
―
20
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20
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20
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1.5
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V
―
50
mA
―
2.0 °C / W
300
―
V / ms
200
―
(dv / dt) c
V_DRM=400V, T_j=125°C
(di / dt) c=−8.7A / ms
10
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V / ms
4
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2
2001-07-13