SF5G48 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – TOSHIBA THYRISTOR SILICON PLANAR TYPE

SF5G48,SF5J48,USF5G48,USF5J48
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak
Off−State Voltage
and Repetitive Peak
Reverse Voltage
SF5G48
USF5G48
SF5J48
USF5J48
Non−Repetitive Peak
Reverse Voltage
(Non−Repetitive < 5ms
T_j = 0~125°C)
SF5G48
USF5G48
SF5J48
USF5J48
Average On−State Current
R.M.S On−State Current
Peak One Cycle Surge On−State
Current (Non−Repetitive)
I²t Limit Value
Critical Rate of Rise of
On−State Current
(Note 1)
Peak Gate Power Dissipation
Average Gate Power Dissition
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Strage Temperature Range
SYMBOL
V_DRM
V_RRM
V_RSM
I_{T (AV)}
I_{T (RMS)}
I_TSM
I²t
di /dt
P_GM
P_{G (AV)}
V_FGM
V_RGM
I_GM
T_j
T_stg
RATING
400
600
500
720
5
7.8
80 (50Hz)
88 (60Hz)
32
100
5
0.5
10
−5
2
−40~125
−40~125
UNIT
V
V
A
A
A
A²s
A / µs
W
W
V
V
A
°C
°C
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Note 1:
V_DRM = 0.5 × Rated
I_TM ≤ 15A
t_gw ≥ 10µs
t_gr ≤ 250ns
i_gp = I_GT × 2.0
CHARACTERISTIC
Repetitive Peak Off−State Current
and Repetitive Peak Reverse
Peak On−State Voltage
Gate Trigger Voltage
Gate Trigger Current
Gate Non−Trigger Voltage
Critical Rate of Rise of Off−State
Voltage
Holding Current
Latching Current
Thermal Resistance
SYMBOL
TEST CONDITION
I_DRM
I_RRM
V_TM
V_GT
I_GT
V_GD
dv / dt
I_H
I_L
R_{th (j−c)}
V_DRM = V_RRM = Rated
I_TM = 15A
V_D = 6V, R_L = 10Ω
V_D = Rated × 2 / 3, Tc = 125°C
V_DRM = Rated, Tc = 125°C
Exponential Rise
V_D = 6V, I_TM = 1A
V_D = 6V, f = 50Hz
t_gw = 50µs, i_G = 30mA
Junction to Case, DC
MIN TYP. MAX UNIT
―
―
10
µA
―
―
1.5
V
―
―
1.0
V
―
―
10
mA
0.2
―
―
V
―
50
― V / µs
―
―
40
mA
―
―
50
mA
―
―
3.2 °C / W
2
2001-07-13