S-AU86 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – RF POWER AMPLIFIER MODULE ○RF POWER AMPLIFIER MODULE for 800MHz Digital MCA

S-AU86
ELECTRICAL CHARACTERISTICS (Tc = 25℃, Z_G = 50Ω)
CHARACTERISTIC
Frequency Range
Output Power
Input Power
Gate Bias Voltage
Gate Bias Current
Adjacent-Channel Power Ratio
Second Harmonic
Third Harmonic
Harmonic
Ralative Phase Variation
Load Mismatch
SYMBOL
f_range
Po
Pi
V_GG
I_GGBias
ACP
2nd HRM
3rd HRM
HRM
—
TEST CONDITION
MIN. TYP. MAX. UNIT
—
889
—
915 MHz
V_DD = 12.0V, I_DD = 1.7A (V_GG = adjust)
Po = 20dBmW, Z_L = 50Ω
40
—
— dBmW
V_DD = 12.0V, I_DD = 1.7A (V_GG = adjust)
Po = 35dBmW Z_L = 50Ω
—
—
V_DD = 12.0V, I_DD = 1.7A (V_GG = adjust)
Po = 35dBmW (Pi= adjust), Z_L = 50Ω
—
—
7 dBmW
8
V
V_DD = 12.0V, I_DD = 1.7A (V_GG = adjust)
Po = 35dBmW (Pi= adjust), Z_L = 50Ω
—
—
10
mA
After that Pi OFF
V_DD = 12.0V, I_DD = 1.7A (V_GG = adjust)
Po = 35dBmW (Pi= adjust), Z_L = 50Ω
Modulated Wave :ππ/4·DQPSK
(α=0.5, 32kbps)
—
Band Width : 16kHz
Frequency Offset : 25kHz
—
-39
dB
—
V_DD = 12.0V, I_DD = 1.7A (V_GG = adjust)
Po = 35dBmW (Pi= adjust), Z_L = 50Ω
—
—
—
-30
dB
—
-30
dB
—
-35
dB
V_DD= 12.0V, I_DD = 1.7A (V_GG = adjust)
Z_L = 50Ω,0° (@Po = 35dBmW)
—
Po = 5 to 40dBmW
—
±5
°
V_DD = 12.0V, I_DD = 1.7A (V_GG = adjust)
—
Pi = 40dBmW (Pi= adjust, @Z_L = 50Ω
No Degradation
—
VSWR LOAD 20: 1 ALL PHASE
Stability
V_DD = 10.0 to 16.0V, V_GG = 1.0 to 9.0V
All spurious output
—
Pi = -40 to 25dBmW
than 60dB below
—
VSWR LOAD 6: 1 ALL PHASE
desired signal
Caution
ï½¥ This product has intersetting cap. Please pay attention for exceeding stress and foreign matter in your application.
And not to take away the cap.
ï½¥ Do not break, cut, crush or dissolve chemically. Dispose of this product properly according to law.
Do not intermingle with normal industrial or domestic waste.
ï½¥ This product is electrostatic sensitivity, please handle with caution.
2
2007-11-01