S-AU50M Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – TOSHIBA RF POWER AMPLIFIER MODULE

ELECTRICAL CHARACTERISTICS (Tc = 25°C)
S−AU50M
CHARACTERISTIC
Frequency Range
Output Power
Power Gain
Total Efficiency
Input VSWR
Harmonics
Load Mismatch
Stability
SYMBOL
TEST CONDITION
f_range
Po
G_p
η_T
VSWRin
HRM
—
—
―
V_DD = 9.6V, V_GG = 4V
Pi = 50mW, Z_G = Z_L = 50Ω
V_DD = 15V, Pi = 50mW
Po = 7W (V_GG = adjust)
VSWR LOAD 20: 1 ALL PHASE
V_DD = 7.5~11.5V, V_GG = 0~4V
Pi = 50mW
VSWR LOAD 3: 1 ALL PHASE
MIN TYP. MAX UNIT
430
—
480 MHz
7
—
—
W
21.4 —
—
dB
40
—
—
%
—
—
3.0
—
—
—
−25 dBc
No Degradation
—
All spurious output than
60dB below desired
—
signal
CAUTION
· This product has intersetting cap. Please pay attention for exceeding stress and foreign matter in your application.
And not to take away the cap.
· Do not intermingle with normal industrial or domestic waste.
· This product is electrostatic sensitivity, please handle with caution.
2001-02-02 2/4