RN4911 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)

Q1, Q2 Common Maximum Ratings (Ta = 25°C)
Characteristic
Collector power dissipation
Junction temperature
Storage temperature range
* Total rating
Symbol
P_C *
T_j
T_stg
Rating
Unit
200
mW
150
°C
−55~150
°C
Marking
RN4911
Equivalent Circuit (Top View)
2
2001-06-07