RN4907 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

Q1, Q2 Common Maximum Ratings (Ta = 25°C)
Characteristic
Collector power dissipation
Junction temperature
Storage temperature range
* Total rating
Symbol
P_C *
T_j
T_stg
Rating
Unit
200
mW
150
°C
−55~150
°C
Marking
RN4907
Equivalent Circuit (Top View)
Q1 Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Symbol
I_CBO
I_CEO
I_EBO
h_FE
V_{CE (sat)}
V_{I (ON)}
V_{I (OFF)}
f_T
C_ob
Test
Circuit
Test Condition
― V_CB = −50V, I_E = 0
― V_CE = −50V, I_B = 0
― V_EB = −6V, I_C = 0
― V_CE = −5V, I_C = −10mA
― I_C = −5mA, I_B = −0.25mA
― V_CE = −0.2V, I_C = −5mA
― V_CE = −5V, I_C = −0.1mA
― V_CE = −10V, I_C = −5mA
― V_CB = −10V, I_E = 0
Min Typ. Max Unit
―
―
−0.081
80
―
−0.7
−0.5
―
―
―
―
―
―
−0.1
―
―
200
3
−100
−500
−0.15
―
−0.3
−1.8
−1.0
―
6
nA
mA
―
V
V
V
MHz
pF
2
2001-06-07