RN4903FE Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

Absolute Maximum Ratings (Ta = 25°C) (Q1)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V_CBO
V_CEO
V_EBO
I_C
Rating
Unit
−50
V
−50
V
−10
V
−100
mA
RN4903FE
Absolute Maximum Ratings (Ta = 25°C) (Q2)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V_CBO
V_CEO
V_EBO
I_C
Rating
Unit
50
V
50
V
10
V
100
mA
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Collector power dissipation
P_C (Note 1)
100
mW
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
−55~150
°C
Note:
Note 1:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Total rating
2
2007-11-01