RN47A4 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type

Maximum Ratings (Ta = 25°C) (Q1)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V_CBO
V_CEO
V_EBO
I_C
Rating
Unit
50
V
50
V
10
V
100
mA
Maximum Ratings (Ta = 25°C) (Q2)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V_CBO
V_CEO
V_EBO
I_C
Rating
Unit
-50
V
-50
V
-6
V
-100
mA
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector power dissipation
Junction temperature
Storage temperature range
Note: Total rating
Symbol
Rating
Unit
P_C (Note)
200
mW
T_j
150
°C
T_stg
-55~150
°C
RN47A4
2
2002-01-30