RN1114 Datasheet, PDF (2/8 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Translation Frequency
Collector output
capacitance
Input Resistor
Resistor Ratio
RN1114~1118
RN1114~1118
RN1114
RN1115
RN1116
RN1117
RN1118
RN1114~16, 18
RN1117
RN1114~1118
RN1114
RN1115
RN1116
RN1117
RN1118
RN1114
RN1115
RN1116
RN1117
RN1118
RN1114~1118
RN1114~1118
RN1114
RN1115
RN1116
RN1117
RN1118
RN1114
RN1115
RN1116
RN1117
RN1118
Symbol
I_CBO
I_CEO
I_EBO
h_FE
V_{CE (sat)}
V_{I (ON)}
V_{I (OFF)}
f_T
C_ob
R₁
R₁/R₂
Test
Circuit
Test Condition
― V_CB = 50V, I_E = 0
― V_CE = 50V, I_B = 0
― V_EB = 5V, I_C = 0
― V_EB = 6V, I_C = 0
― V_EB = 7V, I_C = 0
― V_EB = 15V, I_C = 0
― V_EB = 25V, I_C = 0
―
V_CE = 5V, I_C = 10mA
―
― _{IC = 5mA, IB = 0.25mA}
―
―
― V_CE = 0.2V, I_C = 5mA
―
―
―
―
― V_CE = 5V, I_C = 0.1mA
―
―
― V_CE = 10V, I_C = 5mA
― V_CB = 10V, I_E = 0,
f = 1MHz
―
―
―
―
―
―
―
―
―
―
―
―
RN1114~RN1118
Min Typ. Max Unit
―
―
100
nA
―
―
500
nA
0.35 ― 0.65
0.37 ― 0.71
0.36 ― 0.68 mA
0.78 ― 1.46
0.33 ― 0.63
50
―
―
―
30
―
―
―
0.1
0.3
V
0.6
―
2.0
0.7
―
2.5
0.8
―
2.5
V
1.5
―
3.5
2.5
― 10.0
0.3
―
0.9
0.3
―
1.0
0.3
―
1.1
V
0.3
―
2.3
0.5
―
5.7
―
250
― MHz
―
3.0
6.0
pF
0.7
1.0
1.3
1.54 2.2 2.86
3.29 4.7 6.11 kΩ
7.0 10.0 13.0
32.9 47.0 61.1
―
0.1
―
― 0.22 ―
― 0.47 ―
―
― 2.13 ―
―
4.7
―
2
2001-06-07