RFM04U6P Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – VHF- and UHF-band Amplifier Applications

RFM04U6P
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Drain cut-off current
Gate-source leakage current
Threshold voltage
Output power
Drain efficiency
Power gain
Load mismatch
I_DSS
I_GSS
V_th
P_O
η_D
G_P
⎯
V_DS = 10 V, V_GS = 0 V
V_GS = 3 V
V_DS = 6.0 V, I_D = 0.5mA
V_DS = 6.0 V,
I_idle = 500 mA (V_GS = adjust),
f = 470 MHz, P_i = 200 mW,
Z_G = Z_L = 50 Ω
V_DS = 6.0 V,
P_O = 4 W(P_i = adjust),
I_idle = 500 mA (V_GS = adjust),
f = 470 MHz,
VSWR LOAD 20:1 all phase
⎯
⎯
10
μA
⎯
⎯
5
μA
0.2 0.7 1.2
V
3.5 4.3
⎯
W
55
70
⎯
%
12.4 13.3 ⎯
dB
No degradation
Note 2: These characteristic values are measured using measurement tools specified by Toshiba.
Output Power Test Fixture
(Test Condition: f = 470 MHz, V_DS = 6.0 V, I_idle = 500 mA, P_i = 0.2 W)
C5
P_i
Z_G = 50 Ω
C1
L1 R2
C7
C8
R1
C6
P_O
L2
C2 C3 C4
Z_L = 50 Ω
C9
C1: 20 pF
C2: 8 pF
C3: 18 pF
C4: 1 pF
C5: 2200 pF
C6: 2200 pF
C7: 10000 pF
C8: 2200 pF
C9: 10000 pF
V_GS
V_DS
L1: φ0.6 mm enamel wire, 5.5ID, 5T
L2: φ0.6 mm enamel wire, 5.5ID, 7T
Line: 2mm
R1: 6.8 kΩ
R2: 56 Ω
2
2009-11-03