RFM01U7P Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – VHF- and UHF-band Amplifier Applications

RFM01U7P
Electrical Characteristics (Ta = 25°C)
Characteristics
Drain cut-off current
Gate-source leakage current
Threshold voltage
Output power
Drain efficiency
Power gain
Load mismatch
Symbol
I_DSS
I_GSS
V_th
P_O
η_D
G_P
⎯
Test Condition
V_DS = 20 V, V_GS = 0 V
V_GS = 10 V
V_DS = 7.2 V, I_D = 0.5 mA
V_DS = 7.2 V,
I_idle = 100 mA (V_GS = adjust),
f = 520 MHz, P_i = 100 mW,
Z_G = Z_L = 50 Ω
V_DS = 12.5 V,
P_O = 1.2 W(P_i = adjust),
I_idle = 100 mA (V_GS = adjust),
f = 520 MHz,
VSWR LOAD 20:1 all phase
Min Typ. Max Unit
⎯
⎯
10
μA
⎯
⎯
5
μA
0.6 1.1 1.6
V
1.0 1.2
⎯
W
55
65
⎯
%
10.0 10.8 ⎯
dB
No degradation
⎯
Note 2: These characteristic values are measured using measurement tools specified by Toshiba.
Output Power Test Fixture
(Test Condition: f = 520 MHz, V_DS = 7.2 V, I_idle = 100 mA, P_i = 100 mW)
C11
R2
C5
L1
P_i
.
Z_G = 50 Ω ^{C1 C2}
L3
C7
C8
R1
L4
C9
L2
C3 C4
C10
C6
P_O
Z_L = 50 Ω
V_GS
V_DS
C1: 15 pF
C2: 10 pF
C3: 9 pF
C4: 6 pF
C5: 2200 pF
C6: 2200 pF
C7: 10 μF
C8: 10000 pF
C9: 10 μF
C10: 10000 pF
C11: 2200 pF
L1: φ0.8 mm enamel wire, 2.2ID, 1T
L2: φ0.8 mm enamel wire, 2.2ID, 1T
L3: φ0.8 mm enamel wire, 5.5ID, 4T
L4: φ0.8 mm enamel wire, 5.5ID, 8T
R1: 1.5 kΩ
R2: 51 Ω
2
2009-01-30