MT6L78FS Datasheet, PDF (2/3 Pages) Toshiba Semiconductor – VHF~UHF Band Low-Noise Amplifier Applications

MT6L78FS
Electrical Characteristics Q1 (Ta = 25°C)
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain
Reverse transfer capacitance
Transition frequency
Insertion gain
Noise figure
Symbol
Condition
I_CBO
I_EBO
h_FE
C_re(Note)
f_T
⎪S_21e⎪² (1)
⎪S_21e⎪² (2)
NF
V_CB = 5 V, I_E = 0
V_EB = 1 V, I_C = 0
V_CE = 1V, I_C = 5 mA
V_CB = 1 V, I_E = 0, f = 1 MHz
V_CE = 1 V, I_C = 5 mA
V_CE = 1 V, I_C = 5 mA, f = 2 GHz
V_CE = 3 V, I_C = 20 mA, f = 2 GHz
V_CE = 1 V, I_C = 5 mA, f = 2 GHz
Min Typ. Max Unit
⎯
⎯
0.1
μA
⎯
⎯
1
μA
100
⎯
160
⎯
⎯
0.65 0.9
pF
4
6
⎯ GHz
⎯
3.5
⎯
dB
4
6.5
⎯
⎯
2.4
3.2
dB
Electrical Characteristics Q2 (Ta = 25°C)
Characteristic
Symbol
Condition
Collector cutoff current
I_CBO
V_CB = 5 V, I_E = 0
Emitter cutoff current
I_EBO
V_EB = 1 V, I_C = 0
DC current gain
h_FE
V_CE = 1 V, I_C = 5 mA
Reverse transfer capacitance
C_re(Note) V_CB = 1 V, I_E = 0, f = 1 MHz
Transition frequency
Insertion gain
f_T
⎪S_21e⎪² (1)
⎪S_21e⎪² (2)
V_CE = 1 V, I_C = 5 mA
V_CE = 1 V, I_C = 5 mA, f = 2 GHz
V_CE = 3 V, I_C = 20 mA, f = 2 GHz
Noise figure
NF
V_CE = 1 V, I_C = 5 mA, f = 2 GHz
Note: C_re is measured with a three-terminal method using a capacitance bridge.
Caution
Min Typ. Max Unit
⎯
⎯
0.1
μA
⎯
⎯
1
μA
100
⎯
160
⎯
⎯
0.6 0.85 pF
4
6
⎯ GHz
⎯
3.5
⎯
dB
4
6.5
⎯
⎯
2.4
3.2
dB
This device is sensitive to electrostatic discharge. Ensure that tools and equipment are sufficiently grounded before
handling. When handling individual devices (which are not yet mounted on a circuit board), ensure that the
environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers
and other objects that come into direct contact with devices should be made of antistatic materials.
2
2007-11-01