MT4S100U Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – UHF LOW NOISE AMPLIFIER APPLICATION

Microwave Characteristics (Ta = 25°C)
Characteristics
Transition Frequency
Insertion Gain
Noise Figure
Symbol
fT
|S21e|²
NF
Test Condition
V_CE=2V, I_C=10mA, f=2GHz
V_CE=2V, I_C=10mA, f=2GHz
V_CE=2V, I_C=5mA, f=2GHz
MT4S100U
Min Typ. Max Unit
18
22
-
GHz
13.5 16
-
dB
-
0.72 1.0
dB
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector Cut-off Current
I_CBO
V_CB=6V, I_E=0
Emitter Cut-off Current
DC Current Gain
Output Capacitance
I_EBO
hFE
C_ob
V_EB=1V, I_C=0
V_CE=2V, I_C=10mA
V_CB=2V, I_E=0, f=1MHz
Reverse Transistor Capacitance
C_re
V_CB=2V, I_E=0, f=1MHz (Note 1)
Note 1: Cre is measured by 3 terminal method with capacitance bridge.
Min Typ. Max Unit
-
-
1
µA
-
-
1
µA
200
-
400
-
-
0.41 0.6
pF
-
0.14 0.2
pF
Caution: This device is sensitive to electrostatic discharge.
Please make enough tool and equipment earthed when you handle.
2
2002-05-27