MT3S12T Datasheet, PDF (2/3 Pages) Toshiba Semiconductor – VHF~UHF Band Low-Noise Amplifier Applications

Microwave Characteristics (Ta = 25°C)
Characteristic
Transition frequency
Insertion gain
Noise figure
Symbol
Condition
f_T
⎪S_21e⎪² (1)
⎪S_21e⎪² (2)
NF (1)
V_CE = 1 V, I_C = 5 mA
V_CE = 1 V, I_C = 5 mA, f = 2 GHz
V_CE = 3 V, I_C = 20 mA, f = 2 GHz
V_CE = 1 V, I_C = 5 mA, f = 2 GHz
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Condition
Collector cutoff current
Emitter cutoff current
DC current gain
Reverse transfer capacitance
I_CBO
I_EBO
h_FE
C_re
V_CB = 5 V, I_E = 0
V_EB = 1 V, I_C = 0
V_CE = 1 V, I_C = 5 mA
V_CB = 1 V, I_E = 0, f = 1 MHz(Note)
Note: C_re is measured with a three-terminal method using a capacitance bridge.
MT3S12T
Min Typ. Max Unit
5
7
⎯ GHz
⎯
4.5
⎯
dB
4.5
7
⎯
⎯
1.7 2.5
dB
Min Typ. Max Unit
⎯
⎯
0.1
μA
⎯
⎯
1
μA
100
⎯
160
⎯
0.7 0.95 pF
Caution
This device is sensitive to electrostatic discharge. Ensure that tools and equipment are sufficiently grounded before
handling. When handling individual devices (which are not yet mounted on a circuit board), ensure that the
environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers
and other objects that come into direct contact with devices should be made of antistatic materials.
2
2007-11-01