MT3S111TU Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – VHF-UHF Low-Noise, Low-Distortion Amplifier Application

Microwave Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Transition frequency
Insertion gain
Noise figure
3^rd order intermodulation distortion output
intercept point
f_T
|S_21e|²(1)
|S_21e|²(2)
NF(1)
NF(2)
OIP₃
V_CE=5 V,I_C=30 mA
V_CE=5 V,I_C=30 mA,f=500 MHz
V_CE=5 V,I_C=30 mA,f=1 GHz
V_CE=5 V,I_C=30 mA,f=500 MHz
V_CE=5 V,I_C=30 mA,f=1 GHz
V_CE=5 V,I_C=30 mA,f=500 MHz,
⊿f=1 MHz
MT3S111TU
Min Typ. Max Unit
8
10
⎯ GHz
⎯
18
⎯
dB
10.5 12.5 ⎯
dB
⎯
0.6
⎯
dB
⎯ 0.85 1.15 dB
⎯
32
⎯ dBmW
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
DC current gain
Output capacitance
Reverse transfer capacitance
I_CBO
h_FE
C_ob
C_re
V_CB=5 V,I_E=0 A
⎯
⎯
0.1
μA
V_CE=5 V,I_C=50 mA
200
⎯
400
⎯
V_CB=5 V, I_E=0 A, f=1 MHz
⎯ 1.45 ⎯
pF
V_CB=5 V,I_E=0 A, f=1 MHz (Note 2) ⎯
0.9 1.2
pF
Note 2: C_re is measured using a 3-terminal method with capacitance bridge
Caution:
This device is sensitive to electrostatic discharge due to the high frequency transistor process of
f_T=60 GHz class which is used for this product.
Please make tool and equipment earthed enough when you handle.
2
2009-03-31