MT3S107FS Datasheet, PDF (2/3 Pages) Toshiba Semiconductor – VHF-SHF Low Noise Amplifier Application

Microwave Characteristics (Ta = 25°C)
MT3S107FS
Characteristics
Transition Frequency
Insertion Gain
Noise Figure
Symbol
Test Condition
fT
|S21e|²(1)
|S21e|²(2)
NF
V_CE=1V, I_C=10mA
V_CE=1V, I_C=5mA, f=2GHz
V_CE=3V, I_C=10mA, f=2GHz
V_CE=1V, I_C=5mA, f=2GHz
Min Typ. Max Unit
14 16.5
-
GHz
-
11.5
-
dB
11
13
-
dB
-
0.85 1.5
dB
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Reverse Transistor Capacitance
I_CBO
I_EBO
hFE
C_re
V_CB=5V, I_E=0
V_EB=1V, I_C=0
V_CE=1V, I_C=5mA
V_CB=1V, I_E=0, f=1MHz (Note 1)
Note 1: Cre is measured by 3 terminal method with capacitance Bridge.
Min Typ. Max Unit
-
-
0.1 µA
-
-
0.5 µA
100
-
150
-
-
0.2 0.35 pF
Caution:
This device is sensitive to electrostatic discharge due to applied the high frequency transistor process of
fT=60GHz class is used for this product.
Please make enough tool and equipment earthed when you handle.
2
2007-11-01