MIG150Q201H Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – TOSHIBA Intelligent Power Module Silicon N Channel IGBT

Maximum Ratings (T_j = 25°C)
Stage
Inverter
Brake
Control
Module
Characteristic
Supply voltage
Collector-emitter voltage
Collector current
Forward current
Collector power dissipation
Junction temperature
Supply voltage
Collector-emitter voltage
Collector current
Reverse voltage
Forward current
Collector power dissipation
Junction temperature
Control supply voltage
Input voltage
Fault output voltage
Fault output current
Operating temperature
Storage temperature range
Isolation voltage
Screw torque
MIG150Q201H
Condition
P-N power terminal
―
Tc = 25°C, DC
Tc = 25°C, DC
Tc = 25°C
―
P-N power terminal
―
Tc = 25°C, DC
―
Tc = 25°C, DC
Tc = 25°C
―
V_D-GND terminal
IN-GND terminal
FO-GND (L) terminal
FO sink current
―
―
AC 1 minute
M5
Symbol
V_CC
V_CES
I_C
I_F
P_C
T_j
V_CC
V_CES
I_C
V_R
I_F
P_C
T_j
V_D
V_IN
V_FO
I_FO
TC
T_stg
V_ISO
―
Ratings
Unit
900
V
1200
V
150
A
150
A
800
W
150
°C
900
V
1200
V
50
A
1200
V
50
A
350
W
150
°C
20
V
20
V
20
V
10
mA
−20 ~ +100
°C
−40 ~ +125
°C
2500
V
3
N·m
Electrical Characteristics (T_j = 25°C)
a. Inverter Stage
Characteristic
Collector cut-off current
Collector-emitter saturation voltage
Forward voltage
Switching time
Symbol
Test Condition
Min Typ. Max Unit
I_CEX
V_CE = 1200 V
T_j = 25°C
―
―
1
mA
T_j = 125°C ―
―
20
V_{CE (sat)}
V_D = 15 V, I_C = 150 A ^{Tj = 25°C}
V_IN = 3 V → 0 V
T_j = 125°C
―
―
2.6
3.5
2.5
―
V
V_F
I_F = 150 A
―
2.2
3.0
V
t_on
0.8
1.5
2.1
t_c(on)
t_rr
V_CC = 600 V, I_C = 150 A
V_D = 15 V, V_IN = 3 V
0V
Inductive load
―
0.7
1.4
― 0.18 0.25 µs
t_off
(Note 1) ―
1.3
2.2
t_c(off)
― 0.25 0.5
2
2001-05-29