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| JDV2S14E Datasheet, PDF (2/3 Pages) Toshiba Semiconductor – TOSHIBA Diode Silicon Epitaxial Planar Type | |||
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Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Series resistance
VR
IR
C0.5V
C1V
C2.5V
C4V
C0.5V/C1V
C1V/C2.5V
rs
IR = 1 µA
VR = 10 V
VR = 0.5 V, f = 1 MHz
VR = 1 V, f = 1 MHz
VR = 2.5 V, f = 1 MHz
VR = 4 V, f = 1 MHz


VR = 4 V, f = 100 MHz
Note: Signal level when capacitance is measured. Vsig = 500 mVrms
Marking
FH
JDV2S14E
Min Typ. Max Unit
10


V


3
nA
56.3  64.7
44
 49.5
pF
19
 26.5
9.2

12
1.25  1.35

1.99 2.15 2.3

0.4 0.8
â¦
2000-09-11 2/3
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