JDV2S13S Datasheet, PDF (2/3 Pages) Toshiba Semiconductor – TOSHIBA Diode Silicon Epitaxial Planar Type

C_V – V_R
10
f = 1 MHz
Ta = 25°C
Vsig = 100mVrms
5
3
1
0
1
2
3
4
5
6
Reverse voltage V_R (V)
JDV2S13S
1.0
0.8
0.6
0.4
0.2
0
0.1
r_s – V_R
f = 470 MHz
Ta = 25°C
0.3 0.5
1
35
10
Reverse voltage V_R (V)
2
2007-11-01