JDV2S10S Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – TOSHIBA DIODE Silicon Epitaxial Planar Type

C_V – V_R
100
f = 1 MHz
50
Ta = 25°C
30
10
5
3
1
0
1
2
3
4
5
6
Reverse voltage VR (V)
JDV2S10S
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
r_s – V_R
f = 470 MHz
Ta = 25°C
0.3 0.5
1
35
10
Reverse voltage VR (V)
000707EAA2
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• The information contained herein is subject to change without notice.
2001-01-09 2/2