HN7G06FU Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications

Q1 Electrical Characteristics (Ta = 25°C)
HN7G06FU
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
I_CBO
I_EBO
h_FE**
V_{CE (sat)(1)}
V_{CE (sat)(2)}
V_{BE (sat)}
f_T
C_ob
V_CB = −15 V, I_E = 0
V_EB = −5 V, I_C = 0
V_CE = −2 V, I_C = −10 mA
I_C = −10 mA, I_B = −0.5 mA
I_C = −200 mA, I_B = −10 mA
I_C = −200 mA, I_B = −10 mA
V_CE = −2 V, I_C = −10 mA
V_CB = −10 V, I_E = 0,
f = 1 MHz
Min Typ. Max Unit
⎯
⎯ −100 nA
⎯
⎯ −100 nA
300 ⎯ 1000
⎯
−15 −30
mV
⎯ −110 −250
⎯ −0.87 −1.2
V
⎯
130
⎯ MHz
⎯
4.2
⎯
pF
Turn-on time
Switching time
Storage time
Fall time
t_on
OUTPUT
⎯
40
⎯
ns
INPUT 300 Ω
0V
t_stg
10 μs
⎯
280
⎯
ns
V_CC
V_BB ^{= −6 V}
t_f
Duty cycle ^<= 2% ^{= 3 V}
IB1 = −IB2 = −5 mA
⎯
65
⎯
ns
**: h_FE Classification A:300~600, B:500~1000
Q2 Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Input resistor
Resistor ratio
Symbol
Test Condition
I_CBO
I_CEO
I_EBO
h_FE
V_{CE (sat)}
V_I(ON)
V_I(OFF)
f_T
C_ob
R1
R1/R2
V_CB = 50 V, I_E = 0
V_CE = 50 V, I_E = 0
V_EB = 10 V, I_C = 0
V_CE = 5 V, I_C = 10 mA
I_C = 5 mA, I_B = 0.25 mA
V_CE = 0.2 V, I_C = 5 mA
V_CE = 5 V, I_C = 0.1 mA
V_CE = 10 V, I_C = 5 mA
V_CB = 10 V, I_E = 0, f = 1 MHz
⎯
⎯
Min Typ.
⎯
⎯
⎯
⎯
0.082 ⎯
80
⎯
⎯
0.1
1.5
⎯
1.0
⎯
⎯
250
⎯
3
32.9 47
0.9 1.0
Max
100
500
0.15
⎯
0.3
5.0
1.5
⎯
⎯
61.1
1.1
Unit
nA
nA
mA
V
V
V
MHz
pF
kΩ
2
2007-11-01