HN1K03FU_07 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type High Speed Switching Applications

Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Symbol
Test Condition
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
I_GSS V_GS = 10V, V_DS = 0
V _{(BR) DSS} I_D = 100μA, V_GS = 0
I_DSS V_DS = 20V, V_GS = 0
V_th
V_DS = 3V, I_D = 0.1mA
|Y_fs|
V_DS = 3V, I_D = 10mA
R_{DS (ON)} I_D = 10mA, V_GS = 2.5V
C_iss
V_DS = 3V, V_GS = 0, f = 1MHz
C_rss
V_DS = 3V, V_GS = 0, f = 1MHz
C_oss V_DS = 3V, V_GS = 0, f = 1MHz
t_on
V_DD = 3V, I_D = 10mA,
V_GS = 0~2.5V
t_off
V_DD = 3V, I_D = 10mA,
V_GS = 0~2.5V
HN1K03FU
Min. Typ. Max. Unit
―
―
1
μA
20
―
―
V
―
―
1
μA
0.5
―
1.5
V
25
50
― mS
―
8
12
Ω
―
8.5
―
pF
―
3.3
―
pF
―
9.3
―
pF
― 0.16 ―
μs
― 0.15 ―
μs
Equivalent Circuit (Top View)
Marking
2
2007-11-01