HN1K02FU_07 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type High Speed Switching Applications

HN1K02FU
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Gate leakage current
Drain-Source breakdown
voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Symbol
Test Condition
I_GSS V_GS = 10V, V_DS = 0
V _{(BR) DSS} I_D = 100μA, V_GS = 0
I_DSS
V_th
|Y_fs|
R_{DS (ON)}
V_DS = 20V, V_GS = 0
V_DS = 3V, I_D = 0.1mA
V_DS = 3V, I_D = 10mA
I_D = 10mA, V_GS = 2.5V
C_iss
V_DS = 3V, V_GS = 0,
f = 1MHz
C_rss
V_DS = 3V, V_GS = 0,
f = 1MHz
C_oss
V_DS = 3V, V_GS = 0,
f = 1MHz
t_on
V_DD = 3V, I_D = 10mA,
V_GS = 0~2.5V
t_off
V_DD = 3V, I_D = 10mA,
V_GS = 0~2.5V
Equivalent Circuit (Top View)
Marking
Min. Typ. Max. Unit
―
―
1
μA
20
―
―
V
―
―
1
μA
0.5
―
1.5
V
20
―
― mS
―
20
40
Ω
―
5.5
―
pF
―
1.6
―
pF
―
6.5
―
pF
― 0.14 ―
μs
― 0.14 ―
μs
2
2007-11-01