HN1C03F_07 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT Process) For Muting And Switching Applications

HN1C03F
Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Base-emitter voltage
Transition frequency
Collector output
capacitance
Test
Symbol _Circuit
Test Condition
I_CBO
― V_CB = 50V, I_E = 0
I_EBO
h_{FE (Note)}
― V_EB = 25V, I_C = 0
― V_CE = 2V, I_C = 4mA
V_{CE (sat)}
― I_C = 30mA, I_B = 3mA
V_BE
― V_CE = 2V, I_C = 4mA
f_T
― V_CE = 6V, I_C = 4mA
C_ob
― V_CB = 10V, I_E = 0, f = 1MHz
Turn-on time
―
―
Min Typ. Max Unit
―
―
0.1 μA
―
―
0.1 μA
200 ― 1200
― 0.042 0.1
V
― 0.61 ―
V
―
30
― MHz
―
4.8
7
pF
―
160
―
Switching
time
Storage Time
―
―
―
500
―
ns
Fall time
―
―
Note: hFE Classification
A: 200~700, B: 350~1200
―
130
―
Marking
Equivalent Circuit (Top View)
2
2007-11-01